4 line tvsarray ? scottsd a l e division smda03 thru smda24c and SMDB03 thru smdb24 c smda/b w w w . mi c r o s e m i . c o m descripti on appeara n c e t h is t r ansie n t v o l t age suppresso r (t vs) array is packaged in an so-8 config uratio n gi ving pr otectio n to 4 unid i re cti o nal or b i -dir ecti ona l data or i n terface lines. it is desi gne d for use in appl icatio ns w here pr otectio n is requir ed at the bo ard level from vo lta ge transi ents cause d b y el ectrostatic disch ar ge (esd) as d e fine d in iec 6100 0-4- 2, electrica l fast transi ent s (ef t ) per iec 6100 0-4-4 a nd effec t s of secon dar y li ght nin g . t hese t v s arra y s have peak p u ls e po w e r ratin g s of 300 w a tts (smda) and 5 00 w a tts (smd b) for an 8/20 sec pu lse. t h e y are suita b l e for protectio n of sensitiv e circuitr y co ns isting of tt l , cmos, dram?s, sram?s, hcmos, hsic and lo w - volta g e interfaces fro m 3.3 volts to 24 volts import a n t : f o r the most cur r e n t data, consult mi c r os e m i ? s w e bsite: http:// www .microsemi.com features pac k agin g ? protects 3.0/3.3 volt up to 24 volt compo n e n ts ? protects 4 uni d i rectio nal or b i d i rectio nal l i nes ? provid es electr icall y - i sol a ted protectio n ? t ape & reel p e r eia standar d 481 ? 13 inc h reel; 2, 500 p i ec es (st a ndard) ? carrier tu bes; 95 pcs (opt ional) max i mu m rat ing s mechan ic al ? operatin g t e mperatur e: -55 c to + 150c ? storage t e mperature: -55 c to + 150c ? smda peak p u lse po w e r: 30 0 w a tts (f ig. 1 and 2) ? smdb peak p u lse po w e r: 50 0 w a tts (f ig. 1 and 2) ? pulse r epetiti o n rate: < . 01% ? molded so-8 surface mount ? ul 94v- 0 f l am mabil i t y c l assif i catio n ? w e ight 0.06 6 g r ams (appr o x i m ate) ? marking: l ogo, device mark in g code, d a te code ? pin #1 d e fin ed b y dot on top o f package elec tric al ch ara cteri s tic s per lin e @ 25 o c unless otherwise specified st and off volt age v wm volt s breakd o w n volt age v br i br = 1 ma volt s cla m pi ng volt age v c i pp = 1 a (figure 2 ) volt s cla m pi ng volt age v c i pp = 5 a (figure 2) volt s st andb y (leaka ge) current i d @v wm a capacit ance f =1 m h z c @0v pf t e m per at ure coeffic i ent of v br vbr mv/c part nu m ber device m a rkin g m a x m i n m a x m a x m a x t y p t y p s m d a 0 3 s d k 3 . 3 4 7 9 2 0 0 6 0 0 - 3 smda03 c s d l 3 . 3 4 7 9 4 0 0 3 0 0 - 5 s m d b 0 3 p d k 3 . 3 4 7 9 2 0 0 6 0 0 - 3 SMDB03 c p d l 3 . 3 4 7 9 4 0 0 3 0 0 - 5 s m d a 0 5 s d a 5 . 0 6 9 . 8 1 1 2 0 4 0 0 3 smda05 c s d b 5 . 0 6 9 . 8 1 1 4 0 2 0 0 1 s m d b 0 5 p d a 5 . 0 6 9 . 8 1 1 2 0 4 0 0 3 smdb05 c p d b 5 . 0 6 9 . 8 1 1 4 0 2 0 0 1 s m d a 1 2 s d c 1 2 . 0 1 3 . 3 1 9 2 4 1 1 8 5 1 0 s m d a 1 2 c s d d 1 2 . 0 1 3 . 3 1 9 2 4 1 9 5 8 s m d b 1 2 p d c 1 2 . 0 1 3 . 3 1 9 2 4 1 1 8 5 1 0 s m d b 1 2 c p d d 1 2 . 0 1 3 . 3 1 9 2 4 1 9 5 8 s m d a 1 5 s d e 1 5 . 0 1 6 . 7 2 4 3 0 1 1 4 0 1 3 s m d a 1 5 c s d f 1 5 . 0 1 6 . 7 2 4 3 0 1 7 0 1 1 s m d b 1 5 p d e 1 5 . 0 1 6 . 7 2 4 3 0 1 1 4 0 1 3 s m d b 1 5 c p d f 1 5 . 0 1 6 . 7 2 4 3 0 1 7 0 1 1 s m d a 2 4 s d g 2 4 . 0 2 6 . 7 4 3 5 5 1 9 0 3 0 s m d a 2 4 c s d h 2 4 . 0 2 6 . 7 4 3 5 5 1 4 5 2 8 s m d b 2 4 p d g 2 4 . 0 2 6 . 7 4 3 5 5 1 9 0 3 0 s m d b 2 4 c p d h 2 4 . 0 2 6 . 7 4 3 5 5 1 4 5 2 8 note: t r ansient voltage suppr essor ( t vs) pr oduct is n o rm ally selected based on its stand of f voltage v wm . product selected voltage should be equa l to or gr eater than the continuo us peak oper a ting voltage of th e cir c u it to be protected. pa rt nu m b er s with a c suf f i x are bi-directio nal devices. m i cro semi scottsdale division 8700 e. thom as rd. po bo x 139 0, scottsdale, az 85252 usa, ( 4 8 0 ) 941- 6300, fax: (480) 947-1 503 page 1 cop y right ? 200 3 12-19- 2003 re v p
4 line tvsarray ? smda/b m i cro semi scottsdale division 8700 e. thom as rd. po bo x 139 0, scottsdale, az 85252 usa, ( 4 8 0 ) 941- 6300, fax: (480) 947-1 503 page 2 cop y right 200 3 12-19- 2003 re v p w w w . mi c r o s e m i . c o m scottsd a l e division smda03 thru smda24c and SMDB03 thru smdb24 c sy mbol s & defin i ti ons sy m b o l d e f i n i t i o n v wm stand off voltage: maximum dc volt age that can be applie d over the operat ing temperatur e range. v wm must be selecte d to be e qua l or be gr ea ter than t he op eratin g volta g e of t he line to b e protected. v br minimum bre a k do w n v o lta g e : minimum volt age t he devic e w i ll e x hi bit at a specifi ed curre nt v c clamp in g volta ge: ma ximum c l ampi ng vo ltag e across the t vs device w h e n subj ected to a give n current at a puls e time of 20 s. i d standb y c u rre nt: leaka ge cu rrent at v wm . c cap a citanc e: cap a citanc e of the t vs as defined @ 0 vo lts at a frequenc y of 1 mhz and stated in pic o fa rads. graphs figure 1 figure 2 peak pu lse p o w e r v s pu lse t i me pu lse w a v e f o rm o u t li ne an d s c he ma t i c pad l a yo u t i n c h e s millimete r s d i m m i n m a x m i n m a x a 0 . 1 8 8 0 . 1 9 7 4 . 7 7 5 . 0 0 b 0 . 1 5 0 0 . 1 5 8 3 . 3 8 1 4 . 0 1 c 0 . 0 5 3 0 . 0 6 9 1 . 3 5 1 . 7 5 d 0 . 0 1 1 0 . 0 2 1 0 . 2 8 0 . 5 3 f 0 . 0 1 6 0 . 0 5 0 0 . 4 1 1 . 2 7 g 0.050 bsc 1.27 bsc j 0 . 0 0 6 0 . 0 1 0 0 . 1 5 0 . 2 5 k 0 . 0 0 5 0 . 0 0 8 0 . 1 0 0 . 2 0 l 0 . 1 8 9 0 . 2 0 6 4 . 8 0 5 . 2 3 p 0 . 2 2 8 0 . 2 4 4 5 . 7 9 6 . 1 9 8 7 6 5 2 4 3 1 8 7 6 5 2 4 3 1 unidirectional bidirectional outli ne schem a tic
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